j.e.ie.u 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 designer's data sheet power field effect transistor n-channel enhancement-mode silicon gate these tmos power fets are designed for medium voltage, high speed power switching applications such as switching regu- lators, converters, solenoid and relay drivers. ? silicon gata for fast switching speeds ? switching times specified at 100c ? designer's data ? idss. vostonl- vgs(th| and soa specified at elevated temperature ? rugged ? soa is power dissipation limited ? source-to-orain diode characterized for use with inductive loads MTM12N10 *mtp12n10e tmos power fets 12 amperes rds(on) = 0-w ohm 100 volts maximum ratings thermal characteristics plating drain-source voltage drain-gate voltage (rqs = 1 mfi) gate-source voltage continuous non-repetitive (tp * 50 us] drain current ? continuous ? pulsed total power dissipation @ tc = 25c derate above 25c operating and storage temperature range symbol vdss vdgr vgs vqsm id idm pd tj-tjjtg value 100 100 20 40 12 30 75 0.6 -65 to 150 unit vdc vdc vdc vpk adc watts w7c c thermal resistance junction to case junction to ambient to 204 to-220 maximum lead temperature for soldering to-220 purposes, v8" from case for 5 seconds to-204 r0jc r0ja tl 1.67 30 62.5 260 300 c/w c MTM12N10 to-204aa mtp12n10e to-220ab nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics itc - 25c unless otherwise noted) ch*r??tw<*tic symbol min max unit off characteristics drain-source breakdown voltage (vgs - o, id = 0.25 ma> zero gate voltage dram current (vds = r*'?d vdss. vgs = oi (vds = rated vdss- vqs = 0, tj = 125c) gate-body leakage current, forward (vqsf = 20 vdc, vds " ) gate-body leakage current, reverse (vgsr = 20 vdc, vds = > v(br)dss idss 'gssf igssr 100 ? ? ? ? 10 100 100 100 vdc jiadc nadc nadc on characteristics* gate threshold voltage (vds = vgs. id = 1 ma) tj = 100c static drain-source on resistance (vqs = 10 vdc, id = 6 adc) dram-source on-voltaga (vrjg = 10 v) (id = 12adc) (id - 6 adq, tj = 100c) forward transconduciancs (vog = 15 v, id - 6 a) vgs(tn> rds(on) vds(on) 9fs 2 1.5 ? ? 3 4.5 4 0.18 2.6 2.2 ? vdc ohm vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance (vds ~ 25 v. vgs ~ ' f - 1 mhzl see figure 11 ciss cdss crss ? ? ? 800 400 100 pf switching characteristics* (tj = 100"c) turn-on delay time rise time turn-qff delay time fall time total gate charge gate-source charge gate-drain charge (vdd = 25 v, id = o.s rated id see figures 9, 13 and 14 ivos - 0.8 rated vdss' id = rated id, vgs = 10 v) see figure 12 td(on) |
